Abstract
In this contribution we report on the application of the sublimation molecular beam epitaxy (MBE) method to grow efficient light emitting Si:Er structures as well the extension of this method to grow waveguiding Si1−xGex layers. The formation processes of optically active Er centers in sublimation MBE grown materials and their properties are discussed. We distinguish the following optically effective Er centers in these materials: the oxygen-related Er-1 center, specific for sublimation MBE layers, a carbon-related center, SiO2-precipitate like centers and a variety of oxygen-related centers with low symmetry. The effect of the increase of photoluminescence efficiency in selectively doped structures, namely, in periodic multilayer Si–Si:Er/Si structures, has been discovered.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
