Abstract
In this contribution we report on the application of the sublimation molecular beam epitaxy (MBE) method to grow efficient light emitting Si:Er structures as well the extension of this method to grow waveguiding Si 1− x Ge x layers. The formation processes of optically active Er centers in sublimation MBE grown materials and their properties are discussed. We distinguish the following optically effective Er centers in these materials: the oxygen-related Er-1 center, specific for sublimation MBE layers, a carbon-related center, SiO 2-precipitate like centers and a variety of oxygen-related centers with low symmetry. The effect of the increase of photoluminescence efficiency in selectively doped structures, namely, in periodic multilayer Si–Si:Er/Si structures, has been discovered.
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