Abstract
The paper presents the preliminary results of experiments performed to study the influence of low-energy Ar ions on the electrical properties of p- and n-type PbTe epitaxial films under ion beam milling. We demonstrate that this treatment causes p-to-n conversion in p-PbTe and increases the electron concentration in n-PbTe, with the electron mobility decreasing. The character of changes in the electrical properties allows to conclude that ion beam milling creates additional donor centres due to the preferential sputtering of tellurium.
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