Abstract
ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.
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