Abstract
Patterned ferroelectric PZT(45/55) thin films were fabricated by electron beam exposed chemical solution deposition (CSD) process. For comparison. PZT thin films without patterning were also fabricated in the same conditions. The 100 nm PZT thin films fabricated by non-repeated CSD process with filling process exhibited good ferroelectric properties while the films without filling process showed large leakage current. The remanent polarization and the coercive field were 26 μC/cm2 and 120 kV/cm, respectively. However, ferroelectric properties of the patterned PZT thin films with filling process could not be confirmed due to large leakage current. These results suggest that the film composition may be changed by electron beam irradiation or following development.
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