Abstract
We fabricated interdigitated back-contact silicon hetero-junction solar cells based on thin-film absorbers on glass. The Si absorbers were directly deposited on the glass and crystallized using liquid phase crystallization. To compare whether our contact system is applicable to a wide range of initial absorber conditions two different types of precursors were prepared with absorber thicknesses between 2.5-9μm. Furthermore, glass superstrates, doping densities and interlayer stacks were varied. With a KOH random pyramid light trapping texture at the back more than 30mA/cm2 were achieved on an electron beam evaporated precursor material and 655mV on a PECVD precursor material.
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