Properties of IZTO Thin Films Prepared by Using a Hetero-Target Sputtering System

Abstract

Indium zinc tin oxide (IZTO) thin lms were deposited on glass substrates at room temperature by using facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and to form high-density plasma between them. The FTS system is a heterotarget sputtering system. When two di erent kinds of targets are installed in the FTS system, one target is ITO (In2O3 90 wt%, SnO2 10 wt%) and the other target is IZO (In2O3 90 wt%, ZnO 10 wt%). The conductive and optical properties of the IZTO thin lm were determined for various DC powers and working pressures. Therefore, the IZTO thin lms were prepared with di erent DC powers and working pressures. As-deposited IZTO thin lms were investigated by using a UV/VIS spectrometer, an X-ray di ractometer, a Hall-e ect measurement system and an atomic force microscope. All IZTO thin lms deposited on glass substrates showed an average of transmittance over 80 % in the visible range (400 800 nm), except the IZTO thin lm deposited at an O2 gas ow rate of 0.1 sccm. We could obtain IZTO thin lms with a low value of resistivity of 4.99 10 4 [ -cm] at an O2 gas ow rate of 0.4 sccm.