Abstract
InSnTaO films were deposited on glass substrates by magnetron sputtering with ITO target and tantalum target. X-ray diffractometer (XRD) and atomic force microscopy (AFM) revealed that InSnTaO films had better crystalline structure, larger grain size and lower surface roughness than ITO films. Ta-doping remarkably improved the optical-electrical characteristics. The films showed obvious Burstin-Moss effect with substrate temperature. Moreover, the direct transition model showed wider optical band gap of InSnTaO films than that of ITO films. As a result, InSnTaO films prepared by co-sputtering revealed better comprehensive properties than traditional ITO films.
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