Abstract
AbstractInSnZrO thin films were deposited on glass substrates by magnetron sputtering with an indium‐tin‐oxide (ITO) target and a zirconium target. X‐ray diffractometry (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) revealed that InSnZrO thin films had better crystalline structure, larger grain size, and lower surface roughness than ITO thin films. Zr doping markedly improved the optical–electrical characteristics. In comparison with ITO thin films, the resistivity of InSnZrO thin films deposited at room temperature decreased from 6.24 × 10−3 to 2.20 × 10−3 Ω cm, and the maximum optical transmittance in the visible range was enhanced from 53.7 to 66.1%. The thin films showed an obvious Burstein–Moss effect with substrate temperature. Moreover, the direct transition model showed a wider optical bandgap of InSnZrO thin films than that of ITO thin films. As a result, InSnZrO thin films prepared by cosputtering revealed better overall properties than traditional ITO thin films.
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