Abstract
We investigated growth and incorporation of Mn into InP (0 0 1) by metal-organic vapour phase epitaxy (MOVPE). Depending on the Mn/In ratio and temperature we found four different incorporation regimes. Flat mirror like layers with high Mn incorporation were either produced around 510 ∘ C or around 600 ∘ C . At higher temperatures or higher Mn-fluxes, the surfaces roughened. We achieved a maximum Mn incorporation around 0.6%, estimated by X-ray diffraction. The corresponding hole concentration was 1.7 × 10 17 cm - 3 . The hole activation energy for the Mn acceptor in variable temperature Hall measurements was 220 meV, comparable to the onset of a broad photoluminescence. Due to this high activation energy the layers showed no spin polarization.
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