Abstract
A new dopant source of carbon trichloro-bromide (CBrCl 3), an inter-substituted compound of two highly efficient dopants viz. CCl 4 and CBr 4, has been used for the heavy carbon doping of GaAs in metal organic vapor phase epitaxy (MOVPE) growth. High doping level of 1.12×10 20 cm −3 was achieved at growth temperature of 600°C and V/III ratio of 10. Self-compensation in the samples was systematically studied using the double crystal X-ray diffraction, Hall and photoluminescence measurements. Samples with hole concentration up to 7.36×10 19 cm −3 were free of compensation, while those with higher hole concentrations were found to be compensated. Compensations of the layers were calculated quantitatively from conventional lattice mismatch measurements. Anti-site incorporation of carbon was found to be the dominant compensation mechanism for hole concentration above 7.36×10 19 cm −3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
