Abstract
ITO thin films with thickness of 3000 were fabricated by rf magnetron sputtering system with a 10 mol % SnO-90 mol % InOtarget at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It`s resistivity, carrier concentration and Hall mobility was 210-4/ Ωcm, 71020/∼ 91020/ cm-3/ and 21∼23 cm/Vsec respectively. And it`s optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.
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