Abstract
Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at <TEX>$550^{\circ}C$</TEX> in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about <TEX>$8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$</TEX>, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.
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