Abstract
Non-alloyed ohmic contacts of HgTe to n-Hg1-xCdxTe (x=0.40-0.60) with metallizations of Ti, In and Au have been studied. In these HgTe/Hg1-xCdxTe structures, which were grown by organometallic epitaxy, the thickness of the HgTe was varied in the range from 0.1 mu m to 5.0 mu m. The minimum value of specific contact resistance, rho c, of the metal/HgTe/Hg1-xCdxTe contacts was 5*10-5 Omega cm2. This value of rho c was a factor of approximately 5 greater than for metal contacts to HgTe. For both metal/HgTe and metal/HgTe/Hg1-xCdxTe contacts, a thickness of the HgTe layer of >or=0.2 mu m was required in order to obtain a minimum in rho c. In addition, a metallization of Ti has produced the contacts with the lowest specific contact resistance and the greatest adhesion to the HgTe.
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