Abstract
Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified, and a diffusion length up to 1 μm is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV.
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