Abstract

Multi-quantum well (MQW) GaAs/In/sub 0.19/Ga/sub 0.81/As solar cells have been measured under low concentration levels (1/spl sim/4 suns). An efficiency of 22% has been obtained at a ratio of 4 suns as opposed to 18% under 1 sun AM1.5 conditions. We explain the results in terms of an enhancement in minority-carrier lifetime under concentration. Even when the concentration ratio is low, the high-injection regime can be achieved since the carrier concentration in the intrinsic layer is very low. The existence of a high concentration of defects in the base layer has been observed by the DLTS analysis. Enhancement of the minority-carrier lifetime under concentration is thought to be due to recombination probability saturation of recombination centers with high-injection of minority carriers.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.