Abstract
We have studied the chemical and electrical properties of Si doped GaAs layers grown from SiH4. - TMG - ASH3 - H2 at atmospheric pressure in a large scale metal-organic chemical vapor deposition (MOCVD) reactor. Excellent mobilities at the high doping levels imply doping efficiency in our reactor is higher than previously reported. We have measured extremely uniform doping and doping-thickness product of the Si doped epilayers. The importance of reactor configuration and the surface controlled growth reaction is illustrated by the relatively temperature independent dopant incorporation and the growth rate dependence of the GaAs on the bulk Fermi level.
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