Abstract
Thick freestanding GaN films were grown by hydride vapor-phase epitaxial method on both pattern-masked and unmasked GaAs substrates. Both approaches resulted on films characterized by a large excess of free carriers at room temperature. The use of a GaAs back surface NiTi substrate protective layer increased the concentration of incorporated iron impurities and yield semi-insulating films. The morphology and crystalline quality of these films show a strong dependence on nucleation layer growth approach and Fe doping concentration. Near infrared photoluminescence and Raman scattering verified the incorporation and activation of the Fe impurities, and its effect on the free carrier concentration.
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