Abstract
The thin-film Hall elements of cadmium arsenide, Cd 3As 2 have been obtained and fundamental parameters of these elements have been examined. The static and dynamic characteristics are linear within the investigated region of magnetic induction B=0 –10 kG. The sensitivity as defined by the slope of the static characteristics ranges from γ=0· 2 to 3·1 V/A kG (depending on the thickness of the film). The maximum output power of the elements defined for B=10 kGand for a nominal control current I x =50 mA is P max=0· 5mW and the nominal efficiency is η=2per cent. The mean temperature coefficients of film resistance and Hall voltage within the temperature interval 0–60°C are α=−0·2%/°C and β=−0·35%/°C. It also has been found that elements covered with a protective layer have good long term stability of these basic parameters.
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