Abstract
1. By evaporating CdSe+Zn ina quasi-closed volume, both doped epitaxial CdSe∶Zn layers and films of solid Cd1−xZnxSe solutions can be obtained. 2. The dependence of the forbidden bandwidth on the composition for a epitaxial Cd1−xZnxSe structure is nonlinear. 3. The current carrier mobility in Cd1−xZnxSe layers has a maximum value (tΜ∼-800 cm2/V·sec) upon making the transition from doped CdSe:Zn layers to ordered solid solutions.
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