Abstract
Temperature dependencies of GaSb whiskers’ resistance doped with Te to concentration of 1.7 × 1018 cm−3 were measured in temperature range 1.5–300 K. At 4.2 K temperature, a sharp drop in the whisker resistance was found. The observed effect is likely connected with the contribution of two processes such as the electron localization in the whiskers and transition in superconducting state at temperature below 4.2 K. The whisker magnetoconductance is considered in the framework of weak antilocalization (WAL) model and connected with subsurface layers of the whiskers. The Shubnikov-de Haas (SdH) oscillatory effect is observed in high-quality n-type GaSb whiskers with tellurium doping concentration near the metal-insulator transition (MIT) for both longitudinal and transverse magnetoresistance.
Highlights
GaSb is an important material for practical implementation in microelectronic circuits, sensors, solid-state lasers, electrooptic modulators, and other new devices due to the high quality and perfection of single crystals [1, 2]
Temperature dependence of resistance for Te-doped GaSb whisker at a zero magnetic field is shown in Fig. 1 over the temperature range 1.5–300 K
Resistance of n-type GaSb whiskers was measured over the temperature range 1.5–300 K and magnetic field up to 10 T
Summary
GaSb is an important material for practical implementation in microelectronic circuits, sensors, solid-state lasers, electrooptic modulators, and other new devices due to the high quality and perfection of single crystals [1, 2]. The GaSb epitaxial layers, or quantum dots grown on lattice-matched, semi-insulating substrates, are used in high-speed devices due to their advantages such as low density of dislocations and defects [3, 4]. These structures are affected by the substrate which restricts the advantages. The highperformance GaSb nanowires could be integrated with devices on the base of InSb, InAs, and InGaAs nanowires by the various transfer techniques [8, 10]
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