Abstract
In this work, p-type Cu2O thin films deposited by RF magnetron sputtering for Cu2O based all metal oxide solar cells were studied as a function of oxygen partial pressure ratio at room temperature. The Cu2O (111) x-ray diffraction peaks were indicated as a function of oxygen partial pressure ratio. Optical band gap energies of as-deposited Cu2O thin films ranged from 1.88 to 1.96 eV as a function of oxygen partial pressure ratio. The resistivity and mobility of the p-type Cu2O thin film with an oxygen partial pressure ratio of 2.4% was 2 ×104 Ω·cm and 15.1 cm2/V·s, respectively.
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