Abstract
The p-type cuprous-oxide (Cu2O) thin films were fabricated by using the reactive sputtering method. As-deposited p-type Cu2O thin films were post-annealed in argon gas ambient. The as-deposited p-type Cu2O thin films exhibited Cu2O (111), Cu2O (220), and Cu2O (200) X-ray diffraction peaks. Increasing the post-annealing temperature in Ar gas resulted in a shifting of the Cu2O (111) and the Cu2O (200) diffraction peaks towards lower and higher angles, respectively. At an annealing temperature of 550 °C, the Cu2O (200) diffraction peaks was strongest. The resistivity, hole concentration and mobility of the p-type Cu2O thin film with an annealing temperature of 550 °C were 179.7 Ω· cm, 1.994 × 1015 cm−3 and 17.43 cm2/V·s, respectively.
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