Abstract
AlN layers grown on Al2O3 substrates by metalorganic chemical vapor desposition were implanted with high doses (3×1016 cm−2, 250 keV) of Co+, Cr+, or Mn+. Band-edge photoluminescence intensity at ∼6 eV was significantly reduced by the implant process and was not restored by 950 °C annealing. A peak was observed at 5.89 eV in all the implanted samples. Impurity transitions at 3.0 and 4.3 eV were observed both in implanted and unimplanted AlN. X-ray diffraction showed good crystal quality for the 950 °C annealed implanted samples, with no ferromagnetic second phases detected. The Cr- and Co-implanted AlN showed hysteresis present at 300 K from magnetometry measurements, while the Mn-implanted samples showed clear loops up to ∼100 K. The coercive field was <250 Oe in all cases.
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