Abstract
Band-edge photoluminescence (BDE-PL) intensities of Czochralski (Cz) and float-zone (FZ)-grown silicon crystals diffused with Cu were observed from room temperature (RT) to 4.2 K. In contrast to the behavior of ordinary transition metals, unexpected enhancements of the BDE-PL intensities of both Cz and FZ samples were observed at RT in an appropriate Cu concentration range. For the observation temperature of 77 K, however, while the BDE-PL intensity of the Cz sample increased following the same trend as that observed at RT, the intensity of the FZ sample abruptly decreased given the same Cu concentration range as that of the Cz sample. The marked difference in the BDE-PL intensities between Cz and FZ samples was also observed with the change in the diffusion temperature of Cu. These unusual BDE-PL intensities were well explained on the basis of two competitive actions of Cu: the intensity enhancement due to surface passivation by Cu and the intensity reduction caused by a deep-level Cu center formed in the bulk.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
