Abstract
The dependence of CVD W growth on various types of TiN layers was investigated with blanket and patterned wafers. There were no appreciable effects of the properties of TiN on the resistivity, structure, growth rate or reflectivity of CVD W in the case of blanket wafers; however, the stress of the W layer was found to be dependent upon the type of TiN glue layer adopted. W deposited on the TDMAT-TiN glue layer exhibits the lowest stress levels among the tested TiN films. TiCl4-TiN proved to be superior to TDMAT-TiN from the viewpoint of W conformality. Although there was no appreciable effect of deposition temperature silane reduction time, contact size or shape of contact upon the W conformality on a TiCl4-TiN layer, the W conformality on TDMAT-TiN was highly dependent on the above parameters, apparently caused by insufficiently plasma treated TiN on the side walls of contacts.
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