Abstract
Tungsten silicide films were formed by the chemical vapor deposition method using the reaction and . The deposition rate, resistivity, composition, stress, crystal structure, and content of impurities were studied and compared with tungsten silicide films deposited by reaction of and . The tungsten silicide films made using have a higher deposition rate and higher Si concentration than those made by using at the same substrate temperature. For these reasons, the tungsten silicide films made by using were found to have a resistivity that is a little higher and, after annealing, a stress that is smaller than that made by . Also, the resistance of tungsten silicide to peeling is larger than that of the film made by using . The crystal structure of the films made by is almost the same as that made by ; however, a tetragonal structure easily forms even in Si‐rich films of . Content of fluorine in films made by is smaller than that in films made by .
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