Abstract
Growth of tungsten and tungsten silicide films on SiO 2 substrate through the reaction via WF 6, SiH 4, and/or H 2 gases in a vertical type low pressure chemical vapor deposition (LPCVD) system was investigated. It was found that the metal tungsten can be selectively deposited on Si, but not on SiO 2. If a very small amount of SiH 4 is introduced into the reaction chamber, tungsten films can be deposited on the SiO 2 substrate, and its growth rate is highly dependent on the substrate temperature. For the growth of tungsten silicides, amorphous WSi x was observed in the as-deposited films on the SiO 2 substrate. After short annealing, formation of W and tetragonal W 5Si 3 crystallites was observed. After prolonged annealing, the film finally transforms into W and WSi 2 if x≲2.3, and transforms completely into WSi 2 if x>2.3. The resistivity of the film drops from 1400 to 160 μΩ cm after annealing at 700°C for 30 min, and begins to increase after further annealing. The change of the film resistivity can be explained by the improvement of the crystallinity, and the transformation to W 5Si 3, WSi 2, and W.
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