Abstract
Growth of tungsten silicide films on (111)-oriented Si substrates through the reactions via WF 6 and SiH 4 gases in a vertical type low pressure chemical vapour deposition (LPCVD) system has been investigated. It is found that the properties of the silicide film are highly dependent upon the flow rates of the reacting gases and the substrate temperature. If the substrate temperature is in the range 350–450°C and the ratio of flow rates for WF 6 to SiH 4 (26% diluted in H 2) is 1:1.35 then a smooth, pinhole free, WSi 2 film can be obtained at growth rates between 250 and 350 Å min −1. Changes in film properties after annealing at temperatures igher than 700°C have also been found. After annealing, the films exhibit well-defined crystallinity and grain size can be as large as 600 Å. In addition, the sheet resistance decreases due to a change of structure from hexagonal WSi 2 to tetragonal WSi 2 which is accompanied by an improvement of the crystallinity and the growth of the WSi 2 grain size.
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