Abstract
Thin films of neodymium-modified bismuth titanate Bi3.44Nd0.56Ti3O12 (BNT) were grown on Pt/TiO2/SiO2/Si substrates using chemical solution deposition method. The capacitors made by applying top Au electrodes on BNT films showed significantly improved values of the remanent polarization as compared to that using bismuth titanate Bi4Ti3O12 (BT) films. The 2P(r) value for the BNT capacitors was determined to be equal to 38 muC/cm(2) at an applied voltage of 24 V, whereas, for Bi4Ti3O12 ( BT) capacitors a value of 20 muC/cm(2) was measured at the same applied voltage. The maximum piezoelectric and pyroelectric coefficients of 22 pm/V and 112 muC/m(2) K respectively, were measured for the BNT thin films.
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