Abstract
The minority carrier diffusion length in Chemical Beam Epitaxy (CBE) grown GaAs 0.995N 0.005 based homo-junction solar cell was estimated and found to be L = 0.08 μm. In addition, the majority carrier traps in N-varying unintentionally doped p-type GaAsN samples grown by CBE were investigated using Deep Level Transient Spectroscopy (DLTS) technique. Five hole traps, HC1–HC5, were detected, where HC2 and HC5 coexist in all samples. These two hole traps were suggested to be a N-related defect and the double donor state of EL2, respectively.
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