Abstract
Abstract CdSb thin films have been deposited on single crystals of layered III–VI compounds In 4 Se 3 and In 4 Te 3 by ion–plasma RF sputtering to obtain new heterojunctions of two compounds with significant mismatch of lattice constants. Conditions of heteroepitaxy of CdSb films strongly differ at deposition on the surface of In 4 Se 3 or In 4 Тe 3 crystals. CdSb films on In 4 Se 3 substrates with crystallite size of 400–600 nm have been obtained at optimal RF power mode, that is confirmed by SEM and AFM microscopy studies. The results of electron probe microanalysis confirm compliance of films' composition with stoichiometric CdSb. For CdSb films deposited on In 4 Тe 3 crystal substrates a system of islands due to Stranski–Krastanov mechanism was recorded. Morphologically different forms of CdSb film growth are promising for the creation of active regions of elements for various applications. Photosensitive elements for near-infrared region with the given selective position of the photosensitivity maxima have been studied on the base of the obtained CdSb–In 4 Se 3 and CdSb–In 4 Тe 3 film heterojunctions.
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