Abstract
Abstract Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AlN layers. Atomic force microscopy shows that an ultra-thin AlN layer does not substantially alter the surface morphology.
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