Abstract
Amorphous Si x C y Ge z :H ( x+ y+ z=1; z∼0.1) have been deposited by reactive sputtering of Si–Ge composite target in argon–methane gas mixtures. The effects of the addition of Ge and the methane partial pressure P on the film properties were investigated. At high P, the addition of Ge could improve the reduction of the photoconductivity with increasing P observed in a-Si x C y :H ( z=0).
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