Abstract
We investigated the effect of plasma treatments using He and H2 gases on the electrical properties of Schottky CdTe diodes. The composition of the initial CdTe surface was Te-rich owing to Br-methanol etching. However, after the plasma treatments, the Te-rich layer was removed from the CdTe surface and the surface composition became stoichiometric. The plasma treatment improved the rectification properties of the Al Schottky CdTe diode. Furthermore, by adopting a guard-ring electrode, the reverse current of the CdTe diode decreased by more than one order compared with that of the CdTe diode without a guard-ring electrode. We evaluated the barrier height and ideality factor from current–voltage characteristics. The barrier heights of the CdTe diodes after He and H2 plasma treatments were 0.75 and 0.73 eV, respectively.
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