Abstract
Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 ingots by EB-PVD. EB power applied to the Al2O3 source was ranged from 3kW to 10kW, while EB power to the ZnO source was fixed at 3kW, at a substrate temperature of 400°C. X-ray diffraction measurement showed that the AZO films were weakly c-axis oriented. Transmittance of All the AZO films was over 80% in the visible range. Highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 5kW. The lowest resistivity of 3.05 × 10−4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 5kW with the deposition time of 300s.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
