Abstract
Al doped ZnO (AZO) films were prepared on quartz substrates by the co-evaporation of ZnO and Al2O3 by EB-PVD. Structural, optical and electrical properties of AZO films were investigated, focusing on the effect of the electron beam power applied to the Al2O3 ingot. X-ray diffraction measurement showed that the AZO films were highly c-axis oriented. Transmittance of all the AZO films was over 85% in the visible range. The highest reflectance in the near IR range was obtained at the EB power on Al2O3 of 7.5 kW, 73% at 2500 nm. The lowest resistivity of 2.34 × 10−4 Ωcm was obtained for the film deposited with the EB power on Al2O3 of 7.5 kW.
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