Abstract

Properties in Fe-Doped ZnS Thin Films

Highlights

  • Transition-Metal (TM) doped wide gap II-VI semiconductors materials, such as ZnO, GaN and ZnS, have been extensively investigated for potential magnetoelectronic or magnetooptical applications with the purpose of realizing of a high Curie temperature (Tc) [1,2,3]

  • It can be explained that Fe ions substitute partly Zn ions and lead to the lattice structure difference

  • To further demonstrate that the Fe-doped ZnS thin films are favorable for high temperature ferromagnetism, we model 64-atom cell to simulate the magnetic interactions of Fe atoms by performing firstprinciples spin-polarized Density Functional Theory (DFT) calculations within Generalized-Gradient Approximation (GGA)

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Summary

Introduction

Transition-Metal (TM) doped wide gap II-VI semiconductors materials, such as ZnO, GaN and ZnS, have been extensively investigated for potential magnetoelectronic or magnetooptical applications with the purpose of realizing of a high Curie temperature (Tc) [1,2,3]. A band structure model, based on the p-d and d-d level repulsions between the TM ions and host elements, has been successfully used to explain the magnetic ordering observed in all Mn-doped III-V and II-VI semiconductors. In this model, the carriers (electrons or holes) play an important role in stabilizing the ferromagnetism of DMS. The magnetization measurements are performed by a Quantum Design superconducting quantum interference device (SQUID) system [1,2,3,4,5,6]

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