Abstract
High quality single crystal films of AlxGa1−xN have been grown on sapphire substrates using low pressure metalorganic chemical vapor deposition at 915 °C over the entire range of x. Electrical and optical properties of the layers were measured. Electrical compensation by Be+ and N+ implants in the layers was studied. Schottky barriers were fabricated and their current voltage characteristics were studied. We also report some initial results of a study of GaN growth kinetics.
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