Abstract
Hydrogenated amorphous carbon (a-C: H) films were deposited from CH 4+ Ar gas with low-pressure dielectric barrier discharge (DBD) plasmas. The deposition rate, film hardness and surface roughness were examined as a function of Ar concentration in CH 4 + Ar. The experimental results revealed that both film hardness and surface roughness increase with increasing Ar concentration from 20% to 67%, and then decrease for Ar concentration exceeding 67%. Also, the deposition rate decreases monotonously with increasing Ar concentration. The high ratio of Ar + flux per hydrocarbon species for the cases of Ar concentration exceeding 67% leaded to the decrease in growth rate and in surface roughness. CH 4 + and Ar + kinetic energies during the film deposition process were also analyzed theoretically based on ion drift-diffuse model. The theoretical analysis on ion kinetic energy indicated that the deposition of dense a-C: H film is proportional to an increase in kinetic energy of the hydrocarbon ion and the sputter of energetic Ar + ions.
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