Abstract
We study the propagation parameters (attenuation and phase shift) of electromagnetic waves in the frequency range 75–110 GHz in dielectric waveguides made of high-resistivity gallium arsenide and silicon, as well as in double-layer n-i and p-n structures based on them. The appearance of new modes is revealed in the case where the vector of the electric field is perpendicular to the interface between the layers, which is related to the presence of the potential barrier and the corresponding charge capacitance. The mode transformation can be used to generate high harmonics (due to the varactor effect) and to monitor the uniformity and the influence of external factors on the properties of dielectric waveguides in the integrated circuits of the millimeter-wavelength range.
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