Abstract
A theoretical investigation was made of the propagation of a high-power light pulse in a semiconductor under interband absorption conditions. A self-consistent system of equations was obtained for the field and the medium allowing for nonequilibrium particle relaxation processes. Allowance was also made for the influence of a strong pulse field on the intensity of such processes. Analytic and numerical investigation of various interesting cases permit comparison between theory and experiment.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have