Abstract
Graphitic carbon nitride (g-C3N4) with embedded 1D-ZnO nanostructures was prepared by simple two step thermal decomposition process. Photocatalyst exhibited higher optical absorption than pure ZnO due to π-π conjugations of C3N4, which thus allow greater adsorption on its surface. Conduction band (CB) edge of g-C3N4 being more negative than ZnO and Valence band (VB) of ZnO is more positive than VB of g-C3N4; this alignment of Type (II) resulted in transfer of excited electrons in g-C3N4 to the CB of ZnO. This charge transfer created the internal electrostatic potential, which aided in reducing the recombination rate of charge carriers. Finally, samples were tested for photo-electrochemical activity measured by generated photocurrent density with respect to voltage and time under illumination conditions.
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