Promising spintronics: Mn-based Heusler alloys Mn3Ga, Mn2YGa (Y = V, Nb, Ta), ScMnVGa

Abstract

High spin-polarized materials are expected for the development of spintronic devices. In this work, we are aiming to find new spintronic materials in Mn-based binary, ternary and quaternary Heusler alloys by using the first-principles calculations. We investigated structures, electronic properties, magnetic, tetragonal distortion and mechanic properties of Mn3Ga, Mn2YGa (Y = V, Nb, Ta) and ScMnVGa. The results show that Mn3Ga, ScMnVGa type-I, and type-II have lower energy in antiferromagnetic (AFM) states than ferromagnetic (FM) and paramagnetic (NM). Mn2YGa (Y = V, Nb, Ta) compounds are more stable in FM states. The results of electronic and magnetic properties indicate that Mn3Ga is a gapless half-metallic antiferromagnet (Gapless HM-AFM). Mn2VGa and Mn2NbGa belong to gapless half-metallic ferrimagnets (Gapless HM-FE). Mn2TaGa is ferrimagnets. ScMnVGa type-I is half-metallic antiferromagnets (HM-AFM) and type-II belongs to spin gapless semiconductors with AFM (SGSs-AFM). Inspired by Ferromagnetic shape memory alloys (FAMAs), we performed tetragonal deformation of those compounds, and we predicted that Mn3Ga, Mn2YGa (Y = V, Nb, Ta) have possible martensitic transformations. Finally, the mechanical stability and elastic properties of above-mentioned in both cubic and tetragonal structures were discussed in detail.