Abstract
Layered BiTe and BiSe compounds present promising n-type thermoelectric performance, but the intrinsic high carrier density limits ZT value near room temperature. In this work, thermoelectric performance in Bi(Te, Se) compound is significantly improved by progressively optimizing its carrier density. The room-temperature carrier density is reduced from ∼5.5 × 1020 cm−3 in Bi0.99Te to ∼2.21 × 1020 cm−3 in Bi0.92Sn0.07Te0.4Se0.6-2%Cu, which can lead to obvious enhancement of Seebeck coefficient and power factor, and thus the room-temperature power factor increases from ∼4.17 μW cm−1 K−2 in Bi0.99Te to ∼9.78 μW cm−1 K−2 in Bi0.92Sn0.07Te0.4Se0.6-2%Cu. Moreover, the largely suppressed total thermal conductivity in Bi0.92Sn0.07Te0.4Se0.6-2%Cu also benefit from lowered carrier density because of reduced electronic thermal conductivity, as well as intensified phonon scattering caused by imported point defects. Finally, a room-temperature ZT of ∼0.29 and a peak value of ∼0.41 at 373 K in Bi0.92Sn0.07Te0.4Se0.6-2%Cu are achieved successfully, which are ∼6 and ∼3 times higher than that in Bi0.99Te, respectively.
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