Abstract

AbstractAs efficient current‐induced magnetization switching schemes, thermally assisted spin transfer torque (STT) switching, spin orbit torque (SOT) switching of rare‐earth transition metal films, and electric‐field–assisted SOT switching were briefly reviewed. For thermally assisted STT switching, hybrid memory layer with a low curie temperature (TC) and high TC layers were found to be effective to reduce the critical current density Jc without sacrificing the thermal stability Δ at room temperature. In SOT switching of GdFeCo, the large SOT was confirmed even at the compensation composition of GdFeCo. In SOT switching of MgO / Co / Pt films, the switching current density Jc was confirmed to be modified around 20% by applying an electric field of 1 V/nm through the insulator film.

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