Abstract
SiC has been advanced as the most likely candidate for electronic device applications of wide-gap semiconductors, since the substrate is available and conductivity control is easily carried out by impurity doping. This paper describes the principle of bulk single-crystal growth by a sublimation method, and then introduces the method and characteristics of step-controlled epitaxial growth that is suitable for high-grade 6H- and 4H-SiC layers grown on a substrate made by sublimation. The superior physical characteristics of the grown layer are described. In regard to the latest SiC devices using a high-quality grown layer, the present status is described for power devices such as high-voltage diodes, high-frequency transistors, high-voltage power transistors, and thyristors as well as high-temperature devices. Design guidelines and test results are discussed for a 4H-SiC high-voltage and high-speed Schottky diode, and its high performance is described. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(7): 38–44, 1998
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