Abstract
Avalanche, multiplication factors are calculated for reverse biased p–n junctions with two different junction terminations. One of these is the negative bevel for which it is shown that, by properly locating a metal field plate of the appropriate size on this bevel, it is possible to increase the breakdown voltage of the junction. The field plate is isolated from the semiconductor by a thin dielectric. Since negative bevelled p-n junctions break down in the bulk, the location and size of the field plate must be such that the peak hulk electric field is spread out and reduced. On the other hand, the field plate must be small enough and/or the isolating dielectric thick enough to keep the surface electric fields induced at the field plate edges below the critical value for surface avalanche breakdown. Application in high voltage diodes, power transistors, or thyristors is possible with the floating meta field plate being used to simply increase breakdown voltage or to increase current carrying area (with no...
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call