Abstract
ZnO is a wide-band-gap semiconductor material that is now being developed for many applications, including ultraviolet (UV) light-emitting diodes, UV photodetectors, transparent thin-film transistors, and gas sensors. It can be grown as boules, as thin films, or as nanostructures of many types and shapes. However, as with any useful semiconductor material, its electrical and optical properties are controlled by impurities and defects. Here, we consider various important donor-type impurities, such as H, Al, Ga, and In, and acceptor-type impurities, such as N, P, As, and Sb. We also examine the effects of a few common point defects, including Zn interstitials, Zn vacancies, O vacancies, and complexes of each. The main experimental techniques of interest here include temperature-dependent Hall-effect and low-temperature photoluminescence measurements, because they alone can provide donor and acceptor concentrations and donor energies. The important topic of p-type ZnO is also considered in some detail.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
