Abstract
AbstractConventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three‐terminal heterojunction bipolar transistor solar cell (3T‐HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double‐junction solar cell. However, since the 3T‐HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.
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